TS8542VA datasheet(2/4 Pages) VISHAY

부품명	TS8542VA

상세설명	Specification of High Power IR Emitting Diode Chip

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제조업체	VISHAY [Vishay Siliconix]

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TS8542VA

www.vishay.com

Vishay Semiconductors

Rev. 1.1, 20-Feb-12

2

Document Number: 83474

For technical questions, contact: optochipsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) The measurements are based on samples of die which are mounted on a TO-18 gold header without resin coating

(2) The radiant intensity, Ie, is measured on the geometric axis of the TO-18 header

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Relative Spectral Emission

φe rel = f (λ)

Fig. 2 - Radiant Characteristics

Irel = f(

ϕ)

Note

• All chips are checked in accordance with the Vishay Semiconductor, specification of visual inspection FVOV6870.

The visual inspection shall be made in accordance with the “specification of visual inspection as referenced”. The visual inspection of chip

backside is performed with stereo microscope with incident light and 40x to 80x magnification.

The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure

by QM is not installed.

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 100 mA

VF

1.3

1.5

V

IF = 1 A

VF

2.0

2.5

V

Radiant power (1)

IF = 100 mA

φe

32

mW

IF = 1000 mA

φe

350

mW

Radiant intensity (2)

IF = 100 mA

Ie

7.5

mW/sr

Reverse voltage

IR = 10 μA

VR

10

V

Angle of half intensity

IF = 100 mA

ϕ

50

55

60

deg

Peak wavelength

IF = 1 A

λp

830

850

870

nm

Spectral bandwidth

IF = 1 A

λ0.5

30

nm

Rise time/fall time

IF = 1 A, RL = 50

Ω

tr, tf

15

ns

λ- Wavelength (nm)

21776

0

0.25

0.5

0.75

1

650

750

850

950

0.4

0.2

0

94 8013

0.6

0.9

0.8

0°

30°

10°

20°

40°

50°

60°

70°

80°

0.7

1.0

MECHANICAL DIMENSIONS

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Length of chip edge (x-direction)

Lx

1.066

mm

Length of chip edge (y-direction)

Ly

1.066

mm

Die height

H

0.17

mm

Diameter of bondpad

d

0.127

mm

ADDITIONAL INFORMATION

Frontside metallization, anode

Gold alloy

Backside metallization, cathode

Gold alloy

Dicing

Sawing

Die bonding technology

Epoxy bonding

유사한 부품 번호 - TS8542VA

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Vishay Siliconix	TS8510VB	87Kb / 4P	Specification of High Power IR Emitting Diode Chip Rev. 1.0, 06-Feb-18
	TS8510VB	88Kb / 4P	Specification of High Power IR Emitting Diode Chip 01-Jan-2022
	TS8510VB	89Kb / 4P	Specification of High Power IR Emitting Diode Chip 01-Jan-2023
	TS8510VB-SD-F	88Kb / 4P	Specification of High Power IR Emitting Diode Chip 01-Jan-2022
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유사한 설명 - TS8542VA

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	TS9414VB	91Kb / 4P	Specification of High Power IR Emitting Diode Chip Rev. 1.1, 11-Apr-17
	TS8510VB	88Kb / 4P	Specification of High Power IR Emitting Diode Chip 01-Jan-2022
	TS9410VB	89Kb / 4P	Specification of High Power IR Emitting Diode Chip 01-Jan-2022
	TS8510VB	89Kb / 4P	Specification of High Power IR Emitting Diode Chip 01-Jan-2023
	TS9410VB	90Kb / 4P	Specification of High Power IR Emitting Diode Chip 01-Jan-2023
	TS8514VB	90Kb / 4P	Specification of High Power IR Emitting Diode Chip Rev. 1.0, 11-Apr-17
	TS9410VB	89Kb / 4P	Specification of High Power IR Emitting Diode Chip Rev. 1.2, 23-May-17
	TS8514VB	87Kb / 4P	Specification of High Power IR Emitting Diode Chip 01-Jan-2023
	TS8520VA	95Kb / 4P	Specification of High Power IR Emitting Diode Chip Rev. 1.1, 20-Feb-12
	TS8510VB	87Kb / 4P	Specification of High Power IR Emitting Diode Chip Rev. 1.0, 06-Feb-18

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