1N1185A datasheet(3/8 Pages) VISHAY

부품명	1N1185A

상세설명	Power Silicon Rectifier Diodes, 35 A/40 A/60 A

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제조업체	VISHAY [Vishay Siliconix]

홈페이지	http://www.vishay.com

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Document Number: 93492

For technical questions, contact: ind-modules@vishay.com

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Revision: 25-May-09

3

1N1183, 1N3765, 1N1183A, 1N2128A Series

Power Silicon Rectifier Diodes,

35 A/40 A/60 A

Vishay High Power Products

Notes

(1) JEDEC registered values

(2) Recommended for pass-through holes

(3) Recommended for holed threaded heatsinks

Fig. 1 - Maximum Allowable Case Temperature vs.

Average Forward Current, 1N1183 and 1N3765 Series

Fig. 2 - Typical Low Level Forward Power Loss vs.

Average Forward Current (Sinusoidal Current Waveform),

1N1183 and 1N3765 Series

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

1N1183 1N3765 1N1183A 1N2128A UNITS

Maximum operating

case temperature range

TC

- 65 to 190 (1)

- 65 to 200

°C

Maximum storage

temperature range

TStg

- 65 to 175 (1)

- 65 to 200

Maximum internal thermal

resistance, junction to case

RthJC

DC operation

1.00 (1)

1.1 (1)

0.65 (1)

°C/W

Thermal resistance,

case to sink

RthCS

Mounting surface, smooth, flat and greased

0.25

Maximum allowable

mounting torque

(+ 0 %, - 10 %)

Not lubricated thread, tighting on nut (2)

3.4 (30)

N · m

(lbf · in)

Lubricated thread, tighting on nut (2)

2.3 (20)

Not lubricated thread, tighting on hexagon (3)

4.2 (37)

Lubricated thread, tighting on hexagon (3)

3.2 (28)

Approximate weight

17

g

0.6

oz.

Case style

JEDEC

DO-203AB (DO-5)

유사한 부품 번호 - 1N1185A

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