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2SD2114K 데이터시트(PDF) 1 Page - Rohm

부품명 2SD2114K
상세설명  High-current Gain Medium Power Transistor
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제조업체  ROHM [Rohm]
홈페이지  http://www.rohm.com
Logo ROHM - Rohm

2SD2114K 데이터시트(HTML) 1 Page - Rohm

  2SD2114K Datasheet HTML 1Page - Rohm 2SD2114K Datasheet HTML 2Page - Rohm 2SD2114K Datasheet HTML 3Page - Rohm 2SD2114K Datasheet HTML 4Page - Rohm  
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c
2012 ROHM Co., Ltd. All rights reserved.
2012.01 - Rev.C
2SD2114K
0
∼0.1
1.1
0.8
±0.1
0.15
0.4
2.9
±0.2
1.9
±0.2
0.95 0.95
−0.1
+0.2
+0.1
−0.06
+0.1
−0.05
(2)
(1)
(3)
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
Abbreviated symbol: BB
All terminals have same dimensions
Denotes hFE
High-current Gain Medium Power Transistor (20V, 0.5A)
2SD2114K
Features
Dimensions (Unit : mm)
1) High DC current gain.
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO =12V (Min.)
3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.)
(IC / IB = 500mA / 20mA)
Structure
Epitaxial planar type
NPN silicon transistor
Absolute maximum ratings (Ta=25
C)
Parameter
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
25
V
V
V
A(DC)
W
°C
°C
20
12
0.5
A(Pulse)
1
0.2
150
−55 to +150
Symbol
Limits
Unit
Single pulse Pw=100ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta=25
C)
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
Min.
25
20
12
0.18
350
8.0
0.5
0.5
0.4
V
IC
=10μA
IC
=1mA
IE
=10μA
VCB
=20V
VEB
=10V
IC/IB
=500mA/20mA
VCE
=10V, IE= −50mA, f=100MHz
VCB
=10V, IE=0A, f=1MHz
V
V
μA
μA
hFE
820
2700
VCE
=3V, IC=10mA
V
MHz
pF
Ron
0.8
IB
=1mA, Vi=100mV(rms), f=1kHz
Ω
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Output On-resistance
Measured using pulse current


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