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SBW13009-S 데이터시트(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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SBW13009-S 데이터시트(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
1 / 5 page Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. SBW13009-S SBW13009-S SBW13009-S SBW13009-S Rev.A Aug.2010 High Voltage Fast-Switching NPN Power Transistor Features � Very High Switching Speed � High Voltage Capability � Wide Reverse Bias SOA General Description This Device is designed for high voltage,High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Parameter Test Conditions Value Units VCES Collector-Emitter Voltage VBE =0 700 V VCEO Collector -emitter Voltage IB=0 400 V VEBO Emitter-Base Voltage IC=0 9.0 V IC Collector Current 12 A ICP Collector pulse Current 25 A IB Base Current 6.0 A IBM Base Peak Current tP=5ms 12 A PC Total Dissipation at Tc=25℃ 120 W TJ Operation Junction Temperature -40~150 ℃ TSTG Storage Temperature -40~150 ℃ Thermal Characteristics Symbol Parameter Value Units RӨJC Thermal Resistance Junction to Case 1.04 ℃/W RӨJA Thermal Resistance Junction to Ambient 62.5 ℃/W |
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