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BUZ205 데이터시트(PDF) 1 Page - Siemens Semiconductor Group |
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BUZ205 데이터시트(HTML) 1 Page - Siemens Semiconductor Group |
1 / 6 page Semiconductor Group 508 SIPMOS® Power Transistor BUZ 205 Maximum Ratings Type V DS I D R DS (on) Package 1) Ordering Code BUZ 205 400 V 6.0 A 1.0 Ω TO-220 AB C67078-A1401-A2 Parameter Symbol Values Unit Continuous drain current, T C = 35 ˚C I D 6.0 A Pulsed drain current, T C = 25 ˚C I D puls 24 Drain-source voltage V DS 400 V Drain-gate voltage, R GS = 20 kΩ V DGR 400 Gate-source voltage V GS ± 20 Power dissipation, T C = 25 ˚C P tot 75 W Operating and storage temperature range T j , Tstg – 55 ... + 150 ˚C Thermal resistance, chip-case R th JC ≤ 1.67 K/W DIN humidity category, DIN 40 040 E – IEC climatic category, DIN IEC 68-1 55/150/56 q N channel q Enhancement mode q FREDFET 1) See chapter Package Outlines. |
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