전자부품 데이터시트 검색엔진 |
|
1N50Z 데이터시트(PDF) 3 Page - Unisonic Technologies |
|
1N50Z 데이터시트(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 1N50Z Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-726.b ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=400V, ID=1.5A (Note 1, 2) 11 16 nC Gate to Source Charge QGS 1.6 nC Gate to Drain Charge QGD 5.5 nC Turn-ON Delay Time tD(ON) VDD=250V, ID=1.5A, RG=25Ω (Note 1, 2) 12 35 ns Rise Time tR 13 35 ns Turn-OFF Delay Time tD(OFF) 42 90 ns Fall-Time tF 15 40 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 1.3 A Maximum Body-Diode Pulsed Current ISM 5 A Drain-Source Diode Forward Voltage VSD IS=1.3A, VGS=0V 1.15 V Body Diode Reverse Recovery Time trr IS=1.5A, VGS=0V, dIF/dt=100A/µs (Note 1) 162 ns Body Diode Reverse Recovery Charge QRR 0.54 µC Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
유사한 부품 번호 - 1N50Z |
|
유사한 설명 - 1N50Z |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |