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3N50ZG-TF3-T 데이터시트(PDF) 3 Page - Unisonic Technologies |
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3N50ZG-TF3-T 데이터시트(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 3N50Z Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-747.a ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=400V, ID=3A (Note 1, 2) 10 13 nC Gate to Source Charge QGS 1.5 nC Gate to Drain Charge QGD 5.5 nC Turn-ON Delay Time tD(ON) VDD=250V, ID=3A, RG=25Ω (Note 1, 2) 10 30 ns Rise Time tR 25 60 ns Turn-OFF Delay Time tD(OFF) 35 80 ns Fall-Time tF 25 60 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 3 A Maximum Body-Diode Pulsed Current ISM 12 A Drain-Source Diode Forward Voltage VSD IS=3A, VGS=0V 1.4 V Body Diode Reverse Recovery Time trr IS=3A, VGS=0V, dIF/dt=100A/µs (Note 1) 170 ns Body Diode Reverse Recovery Charge QRR 0.7 µC Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
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