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UF1010EG-TA3-T 데이터시트(PDF) 1 Page - Unisonic Technologies |
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UF1010EG-TA3-T 데이터시트(HTML) 1 Page - Unisonic Technologies |
1 / 5 page UNISONIC TECHNOLOGIES CO., LTD UF1010E Power MOSFET www.unisonic.com.tw 1 of 5 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-306.C N-CHANNEL POWER MOSFET DESCRIPTION Using high technology of UTC, UTC UF1010E has the features such as: low RDS(ON), fast switching, and low gate charge. Like features of all power MOSFET devices’ features, UTC UF1010E can satisfy almost all the requirements of high efficient device form customers. FEATURES * RDS(ON)<12 mΩ @VGS=10V * Ultra low gate charge :130 nC * Low CRSS = 140 pF(typ. ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability * High ruggedness SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UF1010EL-TA3-T UF1010EG-TA3-T TO-220 G D S Tube UF1010EL-TF1-T UF1010EG-TF1-T TO-220F1 G D S Tube UF1010EL-TF2-T UF1010EG-TF2-T TO-220F2 G D S Tube |
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