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전자부품 데이터시트 검색엔진 |
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LS3386 데이터시트(PDF) 3 Page - Siemens Semiconductor Group |
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LS3386 데이터시트(HTML) 3 Page - Siemens Semiconductor Group |
3 / 7 page ![]() Semiconductor Group 3 1998-09-18 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit LS, LO, LA LY Betriebstemperatur Operating temperature range T op – 55... + 100 ˚C Lagertemperatur Storage temperature range T stg – 55... + 100 ˚C Sperrschichttemperatur Junction temperature T j + 100 ˚C Durchlaßstrom Forward current I F 30 20 mA Stoßstrom Surge current t ≤ 10 µs, D = 0.005 I FM 1 0.2 A Sperrspanung1) Reverse voltage1) V R 3V Verlustleistung Power dissipation T A ≤ 25 ˚C P tot 80 55 mW Wärmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air R th JA 500 K/W 1) Belastung in Sperrichtung sollte vermieden werden. 1) Reverse biasing should be avoided. LS 3386, LA 3386, LO 3386, LY 3386 |
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