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TIP122L-T60-K 데이터시트(PDF) 2 Page - Unisonic Technologies |
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TIP122L-T60-K 데이터시트(HTML) 2 Page - Unisonic Technologies |
2 / 4 page TIP122 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R204-016.B ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 100 V Collector to Emitter Voltage VCEO 100 V Emitter to Base Voltage VEBO 5 V IC Collector Current IC 5 A TO-220 65 W Power Dissipation (TC=25℃) TO-126 PD 40 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Emitter Breakdown Voltage BVCEO IC=100mA 100 V Collector-Emitter Saturation Voltage VCE(SAT)1 IC=3A, IB=12mA 2 V Collector-Emitter Saturation Voltage VCE(SAT)2 IC=5A, IB=20mA 4 V Base-Emitter Saturation Voltage VBE(ON) VCE=3V, IC=3A 2.5 V Collector Cut-Off Current ICBO VCB=100V 200 uA Collector-Cut-Off Current ICEO VCE=50V 500 uA Emitter Cut-Off Current IEBO VEB=5V 2 mA DC Current Gain hFE IC=500mA, VCE=3V IC=3A, VCE=3V 1000 1000 |
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