Parameter

Symbol

Unit

Repetitive peak reverse voltage

Continuous reverse voltage

RMS voltage

Maximum Forward rectified current

Maximum forward voltage

Maximum reverse

Reverse Voltage: 20 to 200 Volts

Forward Current: 1.0 Amp

RoHS Device

Dimensions in inches and (millimeter)

CDBMTS120-HF Thru. CDBMTS1200-HF

Page 1

QW-JB029

Low Profile SMD Schottky Barrier Rectifiers

REV: A

Comchip Technology CO., LTD.

SOD-123S

CDBMTS

120-HF

CDBMTS

140-HF

CDBMTS

160-HF

CDBMTS

180-HF

CDBMTS

1100-HF

20

20

14

40

40

28

60

60

42

1.0

0.70

30

0.5

10

80

80

56

100

100

70

V

V

V

A

V

A

mA

°C

0.50

0.92

Operating temperature

Storage temperature range

-65 to +175

°C

-55 to +125

-55 to +150

120

P

F

CDBMTS

130-HF

30

30

21

CDBMTS

150-HF

50

50

35

Typical diode Junction capacitance

(F=1MHz and applied 4V DC reverse voltage)

Features

Mechanical data

-Case: Molded plastic, SOD-123S/MINI SMA

-Terminals: Solderable per MIL-STD-750, Method 2026.

-Polarity: Indicated by cathode band.

-Weight: 0.0155 grams approx.

-Mounting Position: any

-Epoxy: UL94-V0 rated flame retardant.

Halogen Free

-Low power loss,high efficiency.

-High current capability,low forward voltage drop.

-High surge capability.

-Guarding for overvoltage protection.

-Ultra high-speed switching.

-Low profile package is 40% thinner than standards

SOD-123.

-Silicon epitaxial planar chip,metal silicon junction.

-Lead-free part meets environmental standards of

MIL-STD-19500/228

CDBMTS

1150-HF

150

105

150

CDBMTS

1200-HF

200

140

200

Ma

forward surge current

ximum

8.3ms single half sine-wave

superimposed on rated load

(JEDEC methode)

0.85

better reverse

-Excellent power dissipation offers

leakage current and thermal resistance.

0.154(3.9)

0.138(3.5)

0.018(0.45) Typ.

0.079(2.0)

0.063(1.6)

0.041(1.05)

0.033(0.85)

0.032(0.8) Typ.

0.032(0.8) Typ.

0.037(0.95)

0.029(0.75)

0.119(3.0)

0.103(2.6)

0.009(0.22)

0.007(0.18)

Comchip

S M D D i o d e S p e c i a l i s t