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Q68000-A3386 데이터시트(PDF) 2 Page - Siemens Semiconductor Group

부품명 Q68000-A3386
상세설명  PNP Silicon AF Transistors
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제조업체  SIEMENS [Siemens Semiconductor Group]
홈페이지  http://www.siemens.com/
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Semiconductor Group
2
SMBTA 55
SMBTA 56
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Base-emitter saturation voltage1)
IC = 100 mA, VCE = 1 V
VBE
1.2
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 10 mA
V
Collector-emitter breakdown voltage
IC = 1 mA
SMBTA 55
SMBTA 56
V(BR)CE0
60
80
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
IC = 100
µA
SMBTA 55
SMBTA 56
V(BR)CB0
60
80
Emitter-base breakdown voltage
IE = 10
µA
V(BR)EB0
4––
nA
nA
µA
µA
Collector-base cutoff current
VCB = 60 V
SMBTA 55
VCB = 80 V
SMBTA 56
VCB = 60 V, TA = 150 ˚C
SMBTA 55
VCB = 80 V, TA = 150 ˚C
SMBTA 56
ICB0
100
100
20
20
DC current gain1)
IC = 10 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
hFE
100
100
130
170
V
VCEsat
0.25
nA
Collector cutoff current
VCE = 60 V
ICE0
100
MHz
Transition frequency
IC = 20 mA, VCE = 5 V, f = 20 MHz
fT
100
AC characteristics
pF
Output capacitance
VCB = 10 V, f = 1 MHz
Cobo
–12
1)
Pulse test conditions: t
300 µs, D = 2%.


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