Q68000-A3386 datasheet(2/4 Pages) SIEMENS | PNP Silicon AF Transistors

부품명	Q68000-A3386

부품 상세설명	PNP Silicon AF Transistors

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2

SMBTA 55

SMBTA 56

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Base-emitter saturation voltage1)

IC = 100 mA, VCE = 1 V

VBE

–

1.2

Collector-emitter saturation voltage1)

IC = 100 mA, IB = 10 mA

V

Collector-emitter breakdown voltage

IC = 1 mA

SMBTA 55

SMBTA 56

V(BR)CE0

60

80

–

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Collector-base breakdown voltage

IC = 100

µA

SMBTA 55

SMBTA 56

V(BR)CB0

60

80

–

Emitter-base breakdown voltage

IE = 10

µA

V(BR)EB0

4––

nA

µA

Collector-base cutoff current

VCB = 60 V

SMBTA 55

VCB = 80 V

SMBTA 56

VCB = 60 V, TA = 150 ˚C

SMBTA 55

VCB = 80 V, TA = 150 ˚C

SMBTA 56

ICB0

–

100

20

–

DC current gain1)

IC = 10 mA, VCE = 1 V

IC = 100 mA, VCE = 1 V

hFE

100

–

130

–

170

V

VCEsat

–

0.25

nA

Collector cutoff current

VCE = 60 V

ICE0

–

100

MHz

Transition frequency

IC = 20 mA, VCE = 5 V, f = 20 MHz

fT

–

100

–

AC characteristics

pF

Output capacitance

VCB = 10 V, f = 1 MHz

Cobo

–12

–

1)

Pulse test conditions: t

≤ 300 µs, D = 2%.

유사한 부품 번호 - Q68000-A3386

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Siemens Semiconductor G...	Q68000-A3360	126Kb / 5P	NPN Silicon AF Transistors (High current gain High collector current)
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유사한 설명 - Q68000-A3386

제조업체	부품명	데이터시트	부품 상세설명
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	BCX52-16-E6327	526Kb / 8P	PNP Silicon AF Transistors 2011-07-29
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Infineon Technologies A...	BCX53-16E6327	526Kb / 8P	PNP Silicon AF Transistors 2011-07-29

More results

Q68000-A3386 데이터시트(PDF) 2 Page - Siemens Semiconductor Group

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유사한 부품 번호 - Q68000-A3386

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