전자부품 데이터시트 검색엔진 |
|
CSD16327Q3 데이터시트(PDF) 1 Page - Texas Instruments |
|
|
CSD16327Q3 데이터시트(HTML) 1 Page - Texas Instruments |
1 / 11 page 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0095-01 0 2 4 6 8 10 12 14 0 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to- Source Voltage - V TC = 25°C TC = 125ºC ID = 24A G001 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 Qg - Gate Charge - nC (nC) ID =24A VDD = 12.5V G001 CSD16327Q3 www.ti.com SLPS371 – DECEMBER 2011 N-Channel NexFET ™ Power MOSFET Check for Samples: CSD16327Q3 1 FEATURES PRODUCT SUMMARY 2 • Optimized for 5V Gate Drive VDS Drain to Source Voltage 25 V • Ultra Low Qg and Qgd Qg Gate Charge Total (4.5V) 6.2 nC • Low Thermal Resistance Qgd Gate Charge Gate to Drain 1.1 nC VGS = 3V 5 m Ω • Avalanche Rated RDS(on) Drain to Source On Resistance VGS = 4.5V 4 • Pb Free Terminal Plating VGS = 8V 3.4 • RoHS Compliant Vth Threshold Voltage 1.2 V • Halogen Free • SON 3.3mm x 3.3mm Plastic Package ORDERING INFORMATION Device Package Media Qty Ship APPLICATIONS SON 3.3 × 3.3 13-inch Tape and CSD16327Q3 2500 Plastic Package reel Reel • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and ABSOLUTE MAXIMUM RATINGS Computing Systems TA = 25°C unless otherwise stated VALUE UNIT • Optimized for Control or Synchronous FET VDS Drain to Source Voltage 25 V Applications VGS Gate to Source Voltage +10 / –8 V Continuous Drain Current, TC = 25°C 60 A DESCRIPTION ID Continuous Drain Current(1) 21 A The NexFET ™ power MOSFET has been designed IDM Pulsed Drain Current, TA = 25°C (2) 112 A to minimize losses in power conversion and optimized PD Power Dissipation(1) 3 W for 5V gate drive applications. TJ, Operating Junction and Storage –55 to 150 °C TSTG Temperature Range Top View Avalanche Energy, single pulse EAS 125 mJ ID = 50A, L = 0.1mH, RG = 25Ω (1) RθJA = 45°C/W on 1in 2 Cu (2 oz.) on 0.060" thick FR4 PCB. (2) Pulse width ≤300μs, duty cycle ≤2% RDS(ON) vs VGS Gate Charge 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2011, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
유사한 부품 번호 - CSD16327Q3 |
|
유사한 설명 - CSD16327Q3 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |