SN74HC166AQ1

8BIT PARALLELLOAD SHIFT REGISTER

SCLS538A − AUGUST 2003 − REVISED APRIL 2008

4

POST OFFICE BOX 655303

recommended operating conditions (see Note 3)

MIN

NOM

MAX

UNIT

VCC

Supply voltage

2

5

6

V

VCC = 2 V

1.5

VIH

High-level input voltage

VCC = 4.5 V

3.15

V

VIH

High-level input voltage

VCC = 6 V

4.2

V

VCC = 2 V

0.5

VIL

Low-level input voltage

VCC = 4.5 V

1.35

V

VIL

Low-level input voltage

VCC = 6 V

1.8

V

VI

Input voltage

0

VCC

V

VO

Output voltage

0

VCC

V

VCC = 2 V

1000

∆t/∆v† Input transition rise/fall time

VCC = 4.5 V

500

ns

∆t/∆v† Input transition rise/fall time

VCC = 6 V

400

ns

TA

Operating free-air temperature

−40

85

°C

† If this device is used in the threshold region (from VILmax = 0.5 V to VIHmin = 1.5 V), there is a potential to go into the wrong state from induced

grounding, causing double clocking. Operating with the inputs at tt = 1000 ns and VCC = 2 V does not damage the device; however, functionally,

the CLK inputs are not ensured while in the shift, count, or toggle operating modes.

NOTE 3: All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,

Implications of Slow or Floating CMOS Inputs, literature number SCBA004.

electrical characteristics over recommended operating free-air temperature range (unless

otherwise noted)

PARAMETER

TEST CONDITIONS

VCC

TA = 25°C

MIN

MAX

UNIT

PARAMETER

TEST CONDITIONS

VCC

MIN

TYP

MAX

MIN

MAX

UNIT

2 V

1.9

1.998

1.9

IOH = −20 µA

4.5 V

4.4

4.499

4.4

VOH

VI = VIH or VIL

IOH = −20 µA

6 V

5.9

5.999

5.9

V

VOH

VI = VIH or VIL

IOH = −4 mA

4.5 V

3.98

4.3

3.84

V

IOH = −5.2 mA

6 V

5.48

5.8

5.34

2 V

0.002

0.1

0.1

IOL = 20 µA

4.5 V

0.001

0.1

0.1

VOL

VI = VIH or VIL

IOL = 20 µA

6 V

0.001

0.1

0.1

V

VOL

VI = VIH or VIL

IOL = 4 mA

4.5 V

0.17

0.26

0.33

V

IOL = 5.2 mA

6 V

0.15

0.26

0.33

II

VI = VCC or 0

6 V

±0.1

±100

±1000

nA

ICC

VI = VCC or 0,

IO = 0

6 V

8

80

µA

Ci

2 V to 6 V

3

10

10

pF