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IRFP460B 데이터시트(PDF) 2 Page - Vishay Siliconix |
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IRFP460B 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 8 page IRFP460B, SiHG460B www.vishay.com Vishay Siliconix S12-0812-Rev. B, 16-Apr-12 2 Document Number: 91502 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS. b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -40 °C/W Maximum Junction-to-Case (Drain) RthJC -0.45 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 500 - - V VDS Temperature Coefficient V DS/TJ Reference to 25 °C, ID = 250 μA -0.56 - V/°C Gate-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 1 μA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 10 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 10 A - 0.2 0.25 Forward Transconductance gfs VDS = 50 V, ID = 10 A - 12 - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 100 V, f = 1 MHz - 3094 - pF Output Capacitance Coss - 152 - Reverse Transfer Capacitance Crss -13 - Effective output capacitance, energy relateda Co(er) VGS = 0 V, VDS = 0 V to 400 V - 131 - Effective output capacitance, time relatedb Co(tr) - 189 - Total Gate Charge Qg VGS = 10 V ID = 10 A, VDS = 400 V - 85 170 nC Gate-Source Charge Qgs -14 - Gate-Drain Charge Qgd -28 - Turn-On Delay Time td(on) VDD = 400 V, ID = 10 A, VGS = 10 V, Rg = 9.1 -24 50 ns Rise Time tr -31 62 Turn-Off Delay Time td(off) - 117 176 Fall Time tf - 56 112 Gate Input Resistance Rg f = 1 MHz, open drain - 1.8 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 20 A Pulsed Diode Forward Current ISM -- 80 Diode Forward Voltage VSD TJ = 25 °C, IS = 10 A, VGS = 0 V - - 1.2 V Reverse Recovery Time trr TJ = 25 °C, IF = IS = 10 A, dI/dt = 100 A/μs, VR = 20 V - 437 - ns Reverse Recovery Charge Qrr -5.9 - μC Reverse Recovery Current IRRM -25 - A S D G |
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