PARAMETER

Collector-Base breakdown voltage

Collector-Emitter

voltage(3)

breakdown

Emitter-Base

voltage

breakdown

Base cutoff current

CONDITIONS

Symbol

V

(BR)CBO

V

CEO

(BR)

V

EBO

(BR)

I

BL

I

CEX

MIN.

TYP.

MAX.

-40

-40

-5.0

-0.1

UNIT

V

V

V

µA

Formosa MS

o

A

Off characteristics

I = -0.1mA, I = 0

c

E

I = -1.0mA, I = 0

c

B

I = -0.1mA, I = 0

E

C

Collector cutoff current

V

= -35Vdc, V

= -0.4 Vdc

CE

EB

V

= -35Vdc, V

= -0.4Vdc

CE

EB

3.Pulse test : pukse width < 300uS, duty cycle < 2.0%.

PARAMETER

DC current gain

CONDITIONS

Symbol

h

FE

MIN.

TYP.

MAX.

30

60

100

100

UNIT

-

Vdc

20

On characteristics(3)

I = -0.1mA, V

= -1.0V

c

CE

I = -1.0mA, V

= -1.0V

c

CE

I = -10mA, V

= -1.0V

c

CE

I = -150mA, V

= -1.0V

c

CE

I = -500mA, V

= -2.0V

c

CE

Collector-Emitter saturation voltage(3)

Base-Emitter saturation voltage(3)

I = 150mA, I = 15mA

c

B

I = 500mA, I = 50mA

c

B

I = 150mA, I = 15mA

c

B

I = 500mA, I = 50mA

c

B

Vdc

-0.4

-0.75

-0.95

-1.30

0.75

V

CE(sat)

V

BE(sat)

PARAMETER

Input capacitance

CONDITIONS

Symbol

C

ibo

MIN.

TYP.

MAX.

200

8.5

30

1.5

UNIT

-

0.1

Small-signal characteristics

I = -20mA, V

= -10V, f = 100MHz

C

CE

Output admittance

500

100

h

fe

Current-gain-bandwidth product(4)

Output capacitance

Input impedance

Voltage feeback radio

Small-signal current gain

V

= -10V, I = 0, f = 1.0MHz

CB

E

V

= -0.5V, I = 0, f = 1.0MHz

EB

C

V

= -10V, I = -1.0mA, f = 1.0KHz

CE

C

V

= -10V, I = 1.0mA, f = 1.0KHz

CE

C

V

= -10V, I = -1.0mA, f = 1.0KHz

CE

C

V

= -10V, I = -1.0mA, f = 1.0KHz

CE

C

f

T

C

obo

h

ie

h

re

h

oe

15

8.0

60

1.0

-4

X 10

µmhos

pF

kohms

MHz

pF

Page 3

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

PARAMETER

Storage time

CONDITIONS

Symbol

ts

MIN.

TYP.

MAX.

20

225

UNIT

Switching characteristics

Delay time

Rise time

Fall time

V

= -30V, V

= -15mA

CC

BE

C

B1

td

tr

tf

30

V

= -30V, I =-150mA, I

= I

= -15mA

CC

C

B1

B2

ns

15

4.f is defined as the frequency at which h extrapolates to unity.

T

fe

-0.1

300

PNP Epitaxial Planar Transistor

FMBT4403

Document ID

Issued Date

Revised Date

Revision

Page.

DS-231118

2008/02/10

2010/03/10

B

10