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FGB7N60UNDF 데이터시트(PDF) 3 Page - Fairchild Semiconductor |
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FGB7N60UNDF 데이터시트(HTML) 3 Page - Fairchild Semiconductor |
3 / 9 page 3 www.fairchildsemi.com FGB7N60UNDF Rev. A Electrical Characteristics of the IGBT T C = 25°C unless otherwise noted Electrical Characteristics of the Diode T C = 25°C unless otherwise noted Qg Total Gate Charge VCE = 400V, IC = 7A, VGE = 15V - 18 - nC Qge Gate to Emitter Charge - 3 - nC Qgc Gate to Collector Charge - 13 - nC Symbol Parameter Test Conditions Min. Typ. Max Units VFM Diode Forward Voltage IF = 7A TC = 25 oC - 1.7 2.2 V TC = 125 oC - 1.6 trr Diode Reverse Recovery Time IF =7A, dIF/dt = 200A/µs TC = 25 oC - 32.3 ns TC = 125 oC - 70 Qrr Diode Reverse Recovery Charge TC = 25 oC - 59 nC TC = 125 oC - 172 - |
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