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TPIC5201 데이터시트(PDF) 1 Page - Texas Instruments |
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TPIC5201 데이터시트(HTML) 1 Page - Texas Instruments |
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1 / 12 page  TPIC5201 DUAL POWER DMOS ARRAY SLIS020 − SEPTEMBER 1992 Copyright 1992, Texas Instruments Incorporated 2−1 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 • Two 7.5-A Independent Output Channels, Continuous Current Per Channel • Low r DS(on) . . . 0.09 Ω Typical • Output Voltage ...60 V • Pulsed Current . . . 15 A Per Channel • Avalanche Energy . . . 120 mJ description The TPIC5201 is a power monolithic DMOS array that consists of dual independent N-channel enhancement-mode DMOS transistors. schematic DRAIN1 GATE1 GND 1 2 DRAIN2 GATE2 35 6 7 4 SOURCE1 SOURCE2 absolute maximum ratings over operating case temperature range (unless otherwise noted) Drain-source voltage, VDS 60 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Source-GND voltage 60 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Drain-GND voltage 60 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate-source voltage, VGS ±20 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous source-drain diode current 7.5 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed drain current, each output, all outputs on, ID (see Note 1) 15 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous drain current, each output, all outputs on 7.5 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single-pulse avalanche energy, EAS (see Figure 4) 120 mJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous power dissipation at (or below) TA = 25°C (see Note 2) 2 W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous power dissipation at (or below) TC = 75°C, all outputs on (see Note 2) 31 W . . . . . . . . . . . . . . . Operating virtual junction temperature range, TJ −40 °C to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating case temperature range, TC −40 °C to 125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range, Tstg −40 °C to 125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . NOTES: 1. Pulse duration = 10 ms, duty cycle = 6% 2. For operation above 25 °C free-air temperature, derate linearly at the rate of 16 mW/°C. For operation above 75°C case temperature, and with all outputs conducting, derate linearly at the rate of 0.42 W/ °C. To avoid exceeding the design maximum virtual junction temperature, these ratings should not be exceeded. KV PACKAGE (TOP VIEW) To ensure correct device operation, the source and the drain of the same transistor cannot simultaneously be taken below GND. SOURCE2 DRAIN2 GATE2 GND DRAIN1 SOURCE1 GATE1 7 6 5 4 3 2 1 The tab is electrically connected to GND. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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