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SD05T1 데이터시트(PDF) 2 Page - Sanyo Semicon Device

부품명 SD05T1
상세설명  Transient Voltage Suppressor Diode SOD.323 Diodes for ESD Protection
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제조업체  SANYO [Sanyo Semicon Device]
홈페이지  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

SD05T1 데이터시트(HTML) 2 Page - Sanyo Semicon Device

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SD05T1 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation @ 20
ms (Note 1)
@ TL ≤ 25°C
Ppk
350
Watts
IEC 61000−4−2 (ESD)
Air
Contact
±15
±8.0
kV
IEC 61000−4−4 (EFT)
40
A
ESD Voltage (Human Body Model (HBM) Waveform per IEC 61000−4−2)
VPP
30
kV
Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C
Derate above 25
°C
°PD°
200
1.6
°mW°
mW/
°C
Thermal Resistance Junction−to−Ambient
RqJA
635
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
Lead Solder Temperature − Maximum (10 Second Duration)
TL
260
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
*Other voltages may be available upon request.
1. Nonrepetitive current pulse, per Figure 6.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
Uni−Directional TVS
IPP
IF
V
I
IR
IT
VRWM
VC VBR
VF
ELECTRICAL CHARACTERISTICS
Device
VRWM
(V)
IR @ VRWM
(
mA)
VBR, Breakdown Voltage
(V)
IT
mA
VC @ IPP = 5 A
(Note 3)
(V)
Max IPP
(Note 3)
(A)
VC @ Max IPP
(Note 3)
(V)
Max
Capacitance
(pF)
Min
Max
VR = 0 V
f = 1.0 MHz
SD05T1, G
5.0
10
6.2
7.3
1.0
9.8
24
14.5
350
SD12T1, G
12
1.0
13.3
15.75
1.0
19
15
25
150
3. 8
× 20 ms pulse waveform.


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