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2N2222AHR ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 9 Page - STMicroelectronics

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์ƒ์„ธ๋‚ด์šฉ  Hi-Rel 40 V - 0.8 A NPN transistor
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2N2222AHR
Radiation hardness assurance
Doc ID 16558 Rev 9
9/18
3
Radiation hardness assurance
The products guaranteed in radiation within the JANS system fully comply with the MIL-
PRF-19500/255 specification.
The ESCC detail specifications for bipolar do not include any specification supporting
radiation guarantee. ST has therefore developed its own qualification procedure, which is
described below:
JANS radiation assurance
ST JANS parts guaranteed at 100 krad (Si), tested, in full compliancy with the MIL-PRF-
19500 specification, specifically the Group D inspection, between 50 and 300 rad/s. A brief
summary is provided below:
โ—
All test are performed in accordance to MIL-PRF-19500 and test method 1019 of MIL-
STD-750 for total Ionizing dose.
โ—
Each wafer of each lot is tested. The table below provides for each monitored
parameters of the test conditions and the acceptance criteria
Table 6.
MIL-PRF-19500 (test method 1019) post radiation electrical
characteristics
Symbol
Parameter
Test conditions
Value
Unit
Min.
Max.
ICBO
Collector to base
cutoff current
VCB = 75
20
ยตA
VCB = 60 V
20
nA
IEBO
Emitter to base
cutoff current
VEB = 6 V
20
ยตA
VEB = 4 V
20
nA
V(BR)CEO
Breakdown voltage,
collector to emitter
IC = 10 mA
50
V
ICES
Collector to emitter
cutoff current
VCE = 50 V
100
nA
hFE
Forward-current
transfer ratio
VCE = 10 V; IC = 0.1 mA
[25](1)
1.
See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the
pre- and Post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The
[hFE] value can never exceed the pre-radiation minimum hFE that it is based upon.
VCE = 10 V; IC = 1.0 mA
[37.5](1)
325
VCE = 10 V; IC = 10 mA
[50](1)
VCE = 10 V; IC = 150 mA
[50](1)
300
VCE = 10 V; IC = 500 mA
[15](1)
VCE(sat)
Collector-emitter
saturation voltage
IC = 150 mA; IB = 15 mA
0.35
V
IC = 500 mA; IB = 50 mA
1.15
VBE(sat)
Base-emitter
saturation voltage
IC = 150 mA; IB = 15 mA
0.6
1.38
V
IC = 500 mA; IB = 50 mA
2.3


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