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2N2222AHR ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - STMicroelectronics

๋ถ€ํ’ˆ๋ช… 2N2222AHR
์ƒ์„ธ๋‚ด์šฉ  Hi-Rel 40 V - 0.8 A NPN transistor
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์ œ์กฐ์‚ฌ  STMICROELECTRONICS [STMicroelectronics]
ํ™ˆํŽ˜์ด์ง€  http://www.st.com
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2N2222AHR ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - STMicroelectronics

 
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This is information on a product in full production.
May 2012
Doc ID 16558 Rev 9
1/18
18
2N2222AHR
Hi-Rel 40 V - 0.8 A NPN transistor
Datasheet โ€” production data
Features
โ–  Linear gain characteristics
โ–  Hermetic packages
โ–  ESCC and JANS qualified
โ–  European preferred part list EPPL
โ–  Up to 100 krad(Si) low dose rate
Description
The 2N2222AHR is a silicon planar NPN
transistor specifically designed and housed in
hermetic packages for aerospace and Hi-Rel
applications. It is available in the JAN qualification
system (MIL-PRF19500 compliance) and in the
ESCC qualification system (ESCC 5000
compliance). In case of discrepancies between
this datasheet and the relevant agency
specification, the latter takes precedence.
Figure 1.
Internal schematic diagramI
Parameter
ESCC
JANS
BVCEO min
40 V
50 V
IC (max)
0.8 A
hFE at 10 V - 150 mA
100
TO-18
LCC-3
3
1
2
LCC-3UB
3
1
2
3
1
2
4
Pin 4 in LCC-3UB is connected to the metallic lid.
Table 1.
Devices summary(1)
Device
Qualification
Agency spec.
Package
Radiation level
EPPL
JANS2N2222A
JANS
MIL-PRF-19500/255
LCC-3UB
--
JANSR2N2222A
100 krad
-
SOC2222AUB
ESCC
5201/002
LCC-3UB
-Yes
SOC2222AUBxxSW
100 krad
Yes
SOC2222A
LCC-3
-Yes
SOC2222AxxSW
100 krad
Yes
2N2222AHR
TO-18
--
2N2222ASW
100 krad
-
1.
Contact ST sales office for information about the specific conditions for products in die form and other JAN quality levels
www.st.com


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