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E94706A5X-TE

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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

Absolute Maximum Ratings (Ta=25°C)

• Supply voltage

10

V

• Operating temperature

Topr

–40 to +80

°C

• Storage temperature

Tstg

–50 to +100

°C

Recommended Operating Condition

5V

Description

The DM-111A is a highly sensitive magnetic

resistance element, composed of an evaporated

ferromagnetic alloy on a silicon substrate. The

element can be used for detection of rotational

speed and for detection of angle of rotation and as a

detection of position.

Features

• Low power consumption

• Low magnetic field and high sensitivity

and H=4000A/m

• High reliability

Ensured through silicon nitride protective filming

Magneto-Resistance Element

M-102

(Plastic)

Electrical Characteristics

(Ta=25°C)

DM-111A

Item

Symbol

Condition

Min.

Typ.

Max.

Unit

Total resistance

Midpoint potential

Output voltage

H=4000A/m,

θ=45°

Revoiving magnetic field

Revoiving magnetic field

500

2.47

30

650

2.50

75

800

2.53

k

Ω

V

mVp-p

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