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FDS86540 데이터시트(PDF) 4 Page - Fairchild Semiconductor |
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FDS86540 데이터시트(HTML) 4 Page - Fairchild Semiconductor |
4 / 6 page www.fairchildsemi.com 4 ©2012 Fairchild Semiconductor Corporation FDS86540 Rev. C Figure 7. 0 1020 304050 6070 0 2 4 6 8 10 ID = 18 A VDD = 20 V VDD = 30 V Qg, GATE CHARGE (nC) VDD = 40 V Gate Charge Characteristics Figure 8. 0.1 1 10 60 10 100 1000 10000 f = 1 MHz VGS = 0 V VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss Capacitance vs Drain to Source Voltage Figure9. 0.01 0.1 1 10 100 300 1 10 30 TJ = 100 oC TJ = 25 oC TJ = 125 oC t AV, TIME IN AVALANCHE (ms) Unclamped Inductive Switching Capability Figure 10. 25 50 75 100 125 150 0 5 10 15 20 VGS = 8 V RθJA = 50 o C/W VGS = 10 V T A , AMBIENT TEMPERATURE ( o C ) Maximum Continuous Drain Current vs Ambient Temperature Figure 11. 0.01 0.1 1 10 100 300 0.01 0.1 1 10 100 200 100 μs 10 s 10 ms DC 1 s 100 ms 1 ms VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE TJ = MAX RATED RθJA = 125 oC/W TA = 25 oC Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.5 1 10 100 1000 2000 SINGLE PULSE RθJA = 125 oC/W TA = 25 oC t, PULSE WIDTH (sec) Typical Characteristics T J = 25 °C unless otherwise noted |
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