전자부품 데이터시트 검색엔진 |
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FQD4P25TM 데이터시트(PDF) 4 Page - Fairchild Semiconductor |
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FQD4P25TM 데이터시트(HTML) 4 Page - Fairchild Semiconductor |
4 / 9 page ©2011 Fairchild Semiconductor International Rev. A4, Oct 2011 1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1 1 0 -1 1 0 0 N o te s : ※ 1 . Z θ J C( t ) = 2 . 7 8 /W M a x . ℃ 2 . D u ty F a c t o r , D = t 1 / t 2 3 . T J M - T C = P D M * Z θ J C( t ) s in g le p u l s e D = 0 .5 0 .0 2 0 .2 0 .0 5 0 .1 0 .0 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 T C, Case Temperature [ ] ℃ 10 0 10 1 10 2 10 -1 10 0 10 1 DC 10 ms 1 ms 100 µs Operation in This Area is Limited by R DS(on) Notes : ※ 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse -V DS, Drain-Source Voltage [V] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Notes : ※ 1. V GS = -10 V 2. I D = -2.0 A T J, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 Note : ※ 1. V GS = 0 V 2. I D = -250 µ A T J, Junction Temperature [ oC] Typical Characteristics (Continued) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature Figure 11. Transient Thermal Response Curve t1 PDM t2 |
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