전자부품 데이터시트 검색엔진 |
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2N3637 데이터시트(PDF) 2 Page - Comset Semiconductor |
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2N3637 데이터시트(HTML) 2 Page - Comset Semiconductor |
2 / 3 page PNP 2N3636 – 2N3637 21/09/2012 COMSET SEMICONDUCTORS 2/3 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit hFE DC Current Gain (*) IC = -0.1 mA VCE = -10 V 2N3636 40 - - - 2N3637 80 - - IC = -1 mA VCE = -10 V 2N3636 45 - - 2N3637 90 - - IC = -10 mA VCE = -10 V 2N3636 50 - - 2N3637 100 - - IC = -50 mA VCE = -10 V 2N3636 50 - 150 2N3637 100 - 300 IC = -150 mA VCE = -10 V 2N3636 25 - - 2N3637 50 - - VCE(SAT) Collector-Emitter saturation Voltage (*) IC = -10 mA, IB = -1 mA - - 0.3 V IC = -50 mA, IB = -5 mA - - 0.5 VBE(SAT) Base-Emitter saturation Voltage (*) IC = -10 mA, IB = -1 mA - - 0.8 V IC = -50 mA, IB = -5 mA - - 0.9 fT Transition frequency IC = -30 mA, VCE = -30 V f = 100 MHz 2N3636 150 - - MHz 2N3637 200 - - Cob Output Capacitance IE = 0, VCB = -20 V, f = 100 kHz - - 10 pF Cib Input Capacitance IC = 0, VEB = -1 V, f = 100 kHz - - 75 PF SWITCHING TIMES Symbol Ratings Value Unit ton Turn-on time IC = -50 mA, IB1 = -IB2 = -5 mA VCC = 100 V, CBE = 4 V 400 ns toff Turn-off time 600 (*) Pulse conditions : tp < 300 µs, δ =1.5% |
유사한 부품 번호 - 2N3637 |
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유사한 설명 - 2N3637 |
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