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Z0107MA 데이터시트(PDF) 1 Page - Apollo Electron Co., Ltd. |
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Z0107MA 데이터시트(HTML) 1 Page - Apollo Electron Co., Ltd. |
1 / 5 page 1 3 2 Absolute Maximum Ratings ( Tj = 25°C unless otherwise specified ) Symbol Parameter Condition Ratings Units VDRM Repetitive Peak Off-State Voltage Sine wave, 50 to 60 Hz 600 V IT(RMS) R.M.S On-State Current Tj = 110°C, Full Sine Wave 1.0 A ITSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 10 A I2t I2t for Fusing tp = 10ms 0.41 A2s PGM Peak Gate Power Dissipation 1 W PG(AV) Average Gate Power Dissipation 0.1 W IGM Peak Gate Current 1 A TJ Operating Junction Temperature - 40 ~ 125 °C TSTG Storage Temperature - 40 ~ 150 °C May., 2010. Rev.1 1/5 TN1A60 Sensitive Triac Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 1 A ) ◆ High Commutation dv/dt General Description This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay where high sensi- tivity is required in all four quadrants. IT(RMS) = 1A ITSM = 10A VDRM = 600V TO-92 copyright @ Apollo Electron Co., Ltd. All rights reserved. 3.T2 2.Gate 1.T1 Symbol ○ ○ ○ ▼▲ This device may substitute for Z0107MA. |
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