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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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ACE2304 데이터시트(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE2304 데이터시트(HTML) 2 Page - ACE Technology Co., LTD. |
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2 / 7 page  ACE2304 N-Channel Enhancement Mode MOSFET VER 1.3 2 Packaging Type SOT-23-3 3 1 2 Ordering information ACE2304 XX + H Electrical Characteristics TA=25℃, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250 uA 30 V Gate Threshold Voltage VGS(th) VD=VGS, ID=250uA 1.5 1.7 3.0 Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=1.0V 1 uA VDS=30V, VGS=0V TJ=55℃ 10 On-State Drain Current ID(ON) VDS≧4.5V, VGS=10V 6 A VDS≧4.5V, VGS=4.5V 4 Drain-Source On-Resistance RDS(ON) VGS=10V, ID=3.2A 0.050 0.065 Ω VGS=4.5V, ID=2.0A 0.065 0.090 Forward Transconductance gfs VDS=4.5V,ID=2.5A 4.6 S Diode Forward Voltage VSD IS=1.25A, VGS=0V 0.82 1.2 V SOT-23-3 Description 1 Gate 2 Source 3 Drain BM : SOT-23-3 Pb - free Halogen - free |
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