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AD8842AN 데이터시트(PDF) 3 Page - Analog Devices |
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AD8842AN 데이터시트(HTML) 3 Page - Analog Devices |
3 / 12 page AD8842 REV. 0 –3– DETAIL SERIAL DATA INPUT TIMING (PR = “1”) SDI 1 0 A3 A2 A1 A0 D7 D6 D5 D4 D3 D2 D1 D0 0 LD 1 DAC REGISTER LOAD VOUT 0V +3V CLK 1 0 tDS tDH tPD tCH tCL tCKLD tLD tLDCK tS ±1 LSB ±1 LSB ERROR BAND SDO CLK LD VOUT (DATA OUT) Ax or Dx SDI (DATA IN) 1 0 1 0 1 0 1 0 +3V 0V PRESET TIMING tS ±1 LSB ±1 LSB ERROR BAND PR VOUT 0 +3V 0V 1 tPR Figure 3. Timing Diagram ABSOLUTE MAXIMUM RATINGS (TA = +25°C unless otherwise noted) VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +7 V VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V, –7 V VINx to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDD, VSS VOUTx to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDD, VSS Short Circuit IOUTx to GND . . . . . . . . . . . . . . . . . Continuous Digital Input & Output Voltage to GND . . . . . . . . . . VDD, 0 V Operating Temperature Range . . . . . . . . . . . . –40 °C to +85°C Maximum Junction Temperature (TJ Max) . . . . . . . . . +150 °C Storage Temperature . . . . . . . . . . . . . . . . . . . –65 °C to +150°C Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . +300 °C Package Power Dissipation . . . . . . . . . . . . . . . (TJ Max–TA)/ θ JA Thermal Resistance θ JA, SOIC (SOL-24) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 °C/W P-DIP (N-24) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 °C/W ORDERING GUIDE Temperature Package Package Model Range* Description Option AD8842AN XIND 24-Pin 300mil P-DIP N-24 AD8842AR XIND 24-Pin 300mil SOIC SOL-24 *XIND = –40 °C to +85°C. The AD8842 contains 2452 transistors. WARNING! ESD SENSITIVE DEVICE CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8842 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. |
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