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MJE5731A 데이터시트(PDF) 3 Page - Motorola, Inc

부품명 MJE5731A
상세설명  1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTS
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제조업체  MOTOROLA [Motorola, Inc]
홈페이지  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MJE5731A 데이터시트(HTML) 3 Page - Motorola, Inc

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MJE5730 MJE5731 MJE5731A
3
Motorola Bipolar Power Transistor Device Data
IC, COLLECTOR CURRENT (AMPS)
1.0
0.8
1.4
1.2
0.4
0
0.6
0.2
Figure 3. Base–Emitter Voltage
0.05
0.2
2.0
0.1
0.5
0.3
1.0
1.0
0
TC, CASE TEMPERATURE (°C)
0
50
175
0.8
0.6
0.4
0.2
75
100
125
Figure 4. Normalized Power Derating
SECOND BREAKDOWN
DERATING
THERMAL
DERATING
0.02 0.03
VBE(sat) @ IC/IB = 5.0
TJ = – 55°C
25
°C
150
°C
25
150
10
5.0
Figure 5. Forward Bias Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
2.0
0.5
0.01
30
100
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
dc
500
µs
0.05
10
20
1.0 ms
200 300
500
1.0
0.2
50
0.1
0.02
TC = 25°C
100
µs
MJE5730
MJE5731
MJE5732
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in Fig-
ure 6. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
t, TIME (ms)
1.0
0.01
1 k
0.3
0.2
0.07
R
θJC(t) = r(t) RθJC
R
θJC = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
0.7
Figure 6. Thermal Response
0.5
0.1
0.05
0.03
0.02
0.02
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
0.2
SINGLE PULSE
D = 0.5
0.05
0.1
0.02
0.01


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