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IRFP4137PBF 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFP4137PBF
상세설명  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP4137PBF 데이터시트(HTML) 2 Page - International Rectifier

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IRFP4137PbF
2
www.irf.com
© 2012 International Rectifier
October 30, 2012
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
300
–––
–––
V
VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.24
–––
V/°C Reference to 25°C, ID = 3.5mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
56
69
m
 VGS = 10V, ID = 24A 
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
VDS =300 V, VGS = 0V
–––
–––
250
VDS =300V,VGS = 0V,TJ =125°C
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -20V
RG
Gate Resistance
–––
1.3
–––

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
gfs
Forward Transconductance
45
–––
–––
S
VDS = 50V, ID =24A
Qg
Total Gate Charge
–––
83
125
nC  
ID = 24A
Qgs
Gate-to-Source Charge
–––
28
42
VDS = 150V
Qgd
Gate-to-Drain Charge
–––
26
39
VGS = 10V
td(on)
Turn-On Delay Time
–––
18
–––
ns
VDD = 195V
tr
Rise Time
–––
23
–––
ID = 24A
td(off)
Turn-Off Delay Time
–––
34
–––
RG= 2.2
tf
Fall Time
–––
20
–––
VGS = 10V
Ciss
Input Capacitance
–––
5168 –––
pF  
VGS = 0V
Coss
Output Capacitance
–––
300
–––
VDS = 50V
Crss
Reverse Transfer Capacitance
–––
77
–––
ƒ = 1.0MHz
Coss eff.(ER)
Effective Output Capacitance (Energy Related)
–––
196
–––
VGS = 0V, VDS = 0V to 240V
See Fig.11
Coss eff.(TR)
Output Capacitance (Time Related)
–––
265
–––
VGS = 0V, VDS = 0V to 240V
Diode Characteristics  
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
40
A
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
–––
–––
160
integral reverse
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C,IS = 24A,VGS = 0V 
trr
Reverse Recovery Time
–––
302
–––
ns
TJ = 25°C
VDD = 255V
–––
379
–––
TJ = 125°C
IF = 24A,
Qrr
Reverse Recovery Charge
–––
1739 –––
nC
TJ = 25°C
di/dt = 100A/µs 
–––
2497 –––
TJ = 125°C
 
IRRM
Reverse Recovery Current
–––
13
–––
A
TJ = 25°C
D
S
G
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Recommended max EAS limit, starting TJ = 25°C, L = 2.05mH, RG = 50, IAS = 24A, VGS =10V.
ISD 24A, di/dt 1771A/µs, VDD V(BR)DSS, TJ  175°C.
Pulse width
400µs; duty cycle  2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994
R
is measured at TJ approximately 90°C


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