1

Motorola Bipolar Power Transistor Device Data

Plastic Darlington

Complementary Silicon Power

Transistors

. . . designed for general–purpose amplifier and low–speed switching applications.

• High DC Current Gain —

hFE = 2000 (Typ) @ IC = 2.0 Adc

• Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage

Multiplication

• Choice of Packages —

MJE700 and MJE800 series

T0220AB, MJE700T and MJE800T

MAXIMUM RATINGS

Rating

Symbol

MJE700,T

MJE800,T

MJE702

MJE703

MJE802

MJE803

Unit

Collector–Emitter Voltage

VCEO

60

80

Vdc

Collector–Base Voltage

VCB

60

80

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current

IC

4.0

Adc

Base Current

IB

0.1

Adc

CASE 77

TO–220

Total Power Dissipation @ TC = 25_C

Derate above 25

_C

PD

40

0.32

50

0.40

Watts

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

CASE 77

TO–220

R

θJC

3.13

2.50

_C/W

25

TC, CASE TEMPERATURE (°C)

0

50

125

150

30

TO–220AB

50

40

20

10

Figure 1. Power Derating

75

100

TO–126

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE700/D

MJE700,T

MJE702

MJE703

MJE800,T

MJE802

MJE803

4.0 AMPERE

DARLINGTON

POWER TRANSISTORS

COMPLEMENTARY

SILICON

40 WATT

50 WATT

PNP

NPN

CASE 77–08

TO–225AA TYPE

MJE700 – 703

MJE800 – 803

CASE 221A–06

TO–220AB

MJE700T

MJE800T

REV 3