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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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CSD18502Q5B 데이터시트(PDF) 1 Page - Texas Instruments |
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CSD18502Q5B 데이터시트(HTML) 1 Page - Texas Instruments |
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1 / 12 page  0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) TC = 25°C Id = 30A TC = 125ºC Id = 30A G001 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 50 55 Qg - Gate Charge (nC) ID = 30A VDS = 20V G001 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 CSD18502Q5B www.ti.com SLPS320 – NOVEMBER 2012 40-V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18502Q5B 1 FEATURES PRODUCT SUMMARY 2 • Ultra Low Qg and Qgd TA = 25°C TYPICAL VALUE UNIT • Low Thermal Resistance VDS Drain to Source Voltage 40 V • Avalanche Rated Qg Gate Charge Total (4.5V) 25 nC Qgd Gate Charge Gate to Drain 8.4 nC • Logic Level VGS = 4.5V 2.5 m Ω • Pb Free Terminal Plating RDS(on) Drain to Source On Resistance VGS = 10V 1.8 m Ω • RoHS Compliant VGS(th) Threshold Voltage 1.8 V • Halogen Free • SON 5-mm × 6-mm Plastic Package ORDERING INFORMATION Device Package Media Qty Ship APPLICATIONS SON 5-mm × 6-mm 13-Inch Tape and CSD18502Q5B 2500 Plastic Package Reel Reel • DC-DC Conversion • Secondary Side Synchronous Rectifier ABSOLUTE MAXIMUM RATINGS • Motor Control TA = 25°C VALUE UNIT VDS Drain to Source Voltage 40 V DESCRIPTION VGS Gate to Source Voltage ±20 V The NexFET™ power MOSFET has been designed Continuous Drain Current (Package limited), 100 to minimize losses in power conversion applications. TC = 25°C ID Continuous Drain Current (Silicon limited), A 204 TC = 25°C Figure 1. Top View Continuous Drain Current, TA = 25°C (1) 26 IDM Pulsed Drain Current, TA = 25°C (2) 167 A PD Power Dissipation(1) 3.2 W TJ, Operating Junction and Storage –55 to 150 °C TSTG Temperature Range Avalanche Energy, single pulse EAS 387 mJ ID = 88A, L = 0.1mH, RG = 25Ω (1) Typical RθJA = 40°C/W on a 1-inch 2 , 2-oz. Cu pad on a 0.06- inch thick FR4 PCB. (2) Pulse duration ≤300μs, duty cycle ≤2% RDS(on) vs VGS GATE CHARGE 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2012, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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