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4N28T-M 데이터시트(PDF) 3 Page - Fairchild Semiconductor |
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4N28T-M 데이터시트(HTML) 3 Page - Fairchild Semiconductor |
3 / 15 page 6/15/05 Page 3 of 15 © 2005 Fairchild Semiconductor Corporation GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 4N25 4N26 4N27 4N28 4N35 4N36 4N37 H11A1 H11A2 H11A3 H11A4 H11A5 Note * Typical values at TA = 25°C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter Test Conditions Symbol Min Typ* Max Unit EMITTER Input Forward Voltage (IF = 10 mA) VF 1.18 1.50 V Reverse Leakage Current (VR = 6.0 V) IR 0.001 10 µA DETECTOR Collector-Emitter Breakdown Voltage (IC = 1.0 mA, IF = 0) BVCEO 30 100 V Collector-Base Breakdown Voltage (IC = 100 µA, IF = 0) BVCBO 70 120 V Emitter-Collector Breakdown Voltage (IE = 100 µA, IF = 0) BVECO 710 V Collector-Emitter Dark Current (VCE = 10 V, IF = 0) ICEO 1 50 nA Collector-Base Dark Current (VCB = 10 V) ICBO 20 nA Capacitance (VCE = 0 V, f = 1 MHz) CCE 8pF ISOLATION CHARACTERISTICS Characteristic Test Conditions Symbol Min Typ* Max Units Input-Output Isolation Voltage (Non ‘-M’, Black Package) (f = 60 Hz, t = 1 min) VISO 5300 Vac(rms) (‘-M’, White Package) (f = 60 Hz, t = 1 sec) 7500 Vac(pk) Isolation Resistance (VI-O = 500 VDC) RISO 1011 Ω Isolation Capacitance (VI-O = &, f = 1 MHz) CISO 0.5 pF (‘-M’ White Package) 0.2 2 pF |
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