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MMSF4N01HD 데이터시트(PDF) 1 Page - Motorola, Inc

부품명 MMSF4N01HD
상세설명  TMOS MOSFET 5.8 AMPERES 20 VOLTS
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제조업체  MOTOROLA [Motorola, Inc]
홈페이지  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MMSF4N01HD 데이터시트(HTML) 1 Page - Motorola, Inc

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Motorola TMOS Power MOSFET Transistor Device Data
Designer's™ Data Sheet
Medium Power Surface Mount Products
TMOS Single N-Channel
Field Effect Transistors
MiniMOS
™ devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Ideal for Synchronous Rectification
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
20
Vdc
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
VDGR
20
Vdc
Gate–to–Source Voltage — Continuous
VGS
± 8.0
Vdc
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
ID
ID
IDM
5.8
4.5
50
Adc
Apk
Total Power Dissipation @ TA = 25°C (1)
PD
2.5
Watts
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Thermal Resistance — Junction to Ambient (1)
R
θJA
50
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
DEVICE MARKING
S4N01
(1) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided), 10 sec. max.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMSF4N01HDR2
13
12 mm embossed tape
2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by MMSF4N01HD/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
© Motorola, Inc. 1996
REV 2
CASE 751–05, Style 13
SO–8
N–C
1
2
3
4
8
7
6
5
Top View
Source
Source
Gate
Drain
Drain
Drain
Drain
MMSF4N01HD
TMOS MOSFET
5.8 AMPERES
20 VOLTS
RDS(on) = 0.045 OHM
Motorola Preferred Device
D
S
G
Preferred devices are Motorola recommended choices for future use and best overall value.


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