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MMSF4N01HD 데이터시트(PDF) 1 Page - Motorola, Inc |
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MMSF4N01HD 데이터시트(HTML) 1 Page - Motorola, Inc |
1 / 10 page 1 Motorola TMOS Power MOSFET Transistor Device Data Designer's™ Data Sheet Medium Power Surface Mount Products TMOS Single N-Channel Field Effect Transistors MiniMOS ™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive — Can Be Driven by Logic ICs • Miniature SO–8 Surface Mount Package — Saves Board Space • Ideal for Synchronous Rectification • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, With Soft Recovery • IDSS Specified at Elevated Temperature • Mounting Information for SO–8 Package Provided MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 20 Vdc Drain–to–Gate Voltage (RGS = 1.0 MΩ) VDGR 20 Vdc Gate–to–Source Voltage — Continuous VGS ± 8.0 Vdc Drain Current — Continuous @ TA = 25°C Drain Current — Continuous @ TA = 100°C Drain Current — Single Pulse (tp ≤ 10 µs) ID ID IDM 5.8 4.5 50 Adc Apk Total Power Dissipation @ TA = 25°C (1) PD 2.5 Watts Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C Thermal Resistance — Junction to Ambient (1) R θJA 50 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from case for 10 seconds TL 260 °C DEVICE MARKING S4N01 (1) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided), 10 sec. max. ORDERING INFORMATION Device Reel Size Tape Width Quantity MMSF4N01HDR2 13 ″ 12 mm embossed tape 2500 units Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company. Order this document by MMSF4N01HD/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA © Motorola, Inc. 1996 REV 2 CASE 751–05, Style 13 SO–8 N–C 1 2 3 4 8 7 6 5 Top View Source Source Gate Drain Drain Drain Drain MMSF4N01HD TMOS MOSFET 5.8 AMPERES 20 VOLTS RDS(on) = 0.045 OHM Motorola Preferred Device ™ D S G Preferred devices are Motorola recommended choices for future use and best overall value. |
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