MMSF7P03HD

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

30

—

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

1.0

25

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS(2)

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

—

—

Vdc

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 5.3 Adc)

(VGS = 4.5 Vdc, ID = 2.0 Adc)

RDS(on)

—

—

26

42

35

50

m

W

Forward Transconductance (VDS = 15 Vdc, ID = 2.5 Adc)

gFS

—

12

—

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

24 Vdc V

0 V

Ciss

—

1200

1680

pF

Output Capacitance

(VDS = 24 Vdc, VGS = 0 V,

f = 1.0 MHz)

Coss

—

580

810

Transfer Capacitance

f = 1.0 MHz)

Crss

—

160

220

SWITCHING CHARACTERISTICS(3)

Turn–On Delay Time

(V

15 Vd

I

1 0 Ad

td(on)

—

23.5

47

ns

Rise Time

(VDD = 15 Vdc, ID = 1.0 Adc,

VGS =4 5Vdc

tr

—

42.7

85.4

Turn–Off Delay Time

VGS = 4.5 Vdc,

RG = 10 Ω)

td(off)

—

57.4

114.8

Fall Time

G

)

tf

—

53.6

107.2

Turn–On Delay Time

(V

15 Vd

I

1 0 Ad

td(on)

—

16

32

Rise Time

(VDD = 15 Vdc, ID = 1.0 Adc,

VGS =10Vdc

tr

—

15.2

30.6

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 6.0 Ω)

td(off)

—

99.7

199.4

Fall Time

G

)

tf

—

55.2

110.4

Gate Charge

(See Figure 8)

(V

10 Vd

I

4 9 Ad

QT

—

37.9

75.8

nC

(See Figure 8)

(VDS = 10 Vdc, ID = 4.9 Adc,

Q1

—

4.2

—

( DS

, D

,

VGS = 6.0 Vdc)

Q2

—

11.5

—

Q3

—

7.6

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 2.3 Adc, VGS = 0 Vdc)

(IS = 2.3 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

0.76

0.61

1.2

—

Vdc

Reverse Recovery Time

(I

4 9 Ad

V

0 Vd

trr

—

47.9

—

ns

(IS = 4.9 Adc, VGS = 0 Vdc,

ta

—

27

—

( S

,

GS

,

dIS/dt = 100 A/µs)

tb

—

21

—

Reverse Recovery Stored Charge

QRR

—

0.052

—

µC

(1) Negative sign for P–Channel device omitted for clarity.

(2) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(3) Switching characteristics are independent of operating junction temperature.