W005G thru W10G

Vishay General Semiconductor

Document Number: 88769

Revision: 15-Apr-08

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3

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Figure 3. Typical Forward Characteristics Per Diode

Figure 4. Typical Reverse Leakage Characteristics Per Diode

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.01

0.1

1

10

100

T

Pulse Width = 300 µs

1 % Duty Cycle

Instantaneous Forward Voltage (V)

0

20

40

60

80

100

0.01

0.1

1

10

100

Percent of Rated Peak Reverse Voltage (%)

T

T

Figure 5. Typical Junction Capacitance Per Diode

Figure 6. Typical Transient Thermal Impedance

0.1

1

10

100

1

10

100

Reverse Voltage (V)

T

f = 1.0 MHz

V

0.1

0.01

1

10

100

1

10

100

0.1

t - Heating Time (s)

0.220 (5.6)

0.160 (4.1)

0.388 (9.86)

0.348 (8.84)

1.0 (25.4) MIN.

0.060 (1.52)

0.020 (0.51)

0.032 (0.81)

0.028 (0.71)

0.348 (8.84)

0.308 (7.82)

0.220 (5.6)

0.180 (4.6)

0.220 (5.6)

0.180 (4.6)

Case Style WOG