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STP10NM60N 데이터시트(PDF) 5 Page - STMicroelectronics |
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STP10NM60N 데이터시트(HTML) 5 Page - STMicroelectronics |
5 / 17 page STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Electrical characteristics Doc ID 15764 Rev 5 5/17 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 300 V, ID = 4 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16) - 10 12 32 15 - ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 8 32 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 8 A, VGS = 0 - 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8 A, di/dt = 100 A/µs VDD= 60 V (see Figure 18) - 250 2.12 17 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8 A, di/dt = 100 A/µs VDD= 60 V TJ = 150 °C (see Figure 18) - 315 2.6 16.5 ns µC A |
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