STD10P6F6 datasheet(4/15 Pages) STMICROELECTRONICS

부품명	STD10P6F6

상세설명	P-channel 60 V, 0.15 廓 typ., 10 A STripFET??VI DeepGATE??Power MOSFET in DPAK and TO-220 packages

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Electrical characteristics

STD10P6F6, STP10P6F6

4/15

Doc ID 022967 Rev 2

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Warning:

For the P-channel Power MOSFET the actual polarity of the

voltages and the current must be reversed.

Table 4.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

Voltage

ID = 250 µA, VGS= 0

60

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 60 V

VDS = 60 V, Tc = 125 °C

1

10

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20 V

±

100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2

4

V

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 5 A

0.15

0.18

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 48 V, f=1 MHz,

VGS = 0

-

360

55

28

-

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 48V, ID = 10 A

VGS = 10 V

Figure 3

-

7

1.4

2

-

nC

유사한 부품 번호 - STD10P6F6

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STMicroelectronics	STD10P6F6	1Mb / 24P	P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Rev 5
	STD10P6F6-V01	1Mb / 24P	P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Rev 5
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