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SI4162DY-T1-GE3 데이터시트(PDF) 3 Page - Vishay Siliconix |
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SI4162DY-T1-GE3 데이터시트(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Document Number: 68967 S-82621-Rev. A, 03-Nov-08 www.vishay.com 3 Vishay Siliconix Si4162DY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 10 20 30 40 50 60 70 0.0 0.5 1.0 1.5 2.0 VGS =10thru 4 V VGS =3 V VDS - Drain-to-Source Voltage (V) 0.002 0.004 0.006 0.008 0.010 0.012 0 1020 3040 5060 70 VGS =10 V VGS =4.5 V ID - Drain Current (A) 0 2 4 6 8 10 0 5 10 15 20 VDS =22.5 V ID =20A VDS =7.5 V VDS =15 V Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TC = 25 °C TC = 125 °C TC =- 55 °C VGS - Gate-to-Source Voltage (V) 0 300 600 900 1200 1500 0 6 12 18 24 30 Ciss Coss Crss VDS - Drain-to-Source Voltage (V) 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 VGS =10 V VGS =4.5 V ID =20A TJ -Junction Temperature (°C) |
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