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BC847C 데이터시트(PDF) 3 Page - Fairchild Semiconductor |
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BC847C 데이터시트(HTML) 3 Page - Fairchild Semiconductor |
3 / 12 page 3 Typical Characteristics NPN General Purpose Amplifier (continued) Input and Output Capacitance vs Reverse Bias Voltage 04 8 12 16 20 0 1 2 3 4 5 REVERSE BIAS VOLTAGE (V) f = 1.0 MHz C ob C te Wideband Noise Frequency vs Source Resistance 1,000 2,000 5,000 10,000 20,000 50,000 100,000 0 1 2 3 4 5 R - SOURCE RESISTANCE ( ) V = 5.0 V BANDWIDTH = 15.7 kHz CE I = 10 µA C I = 100 µA C S Ω I = 30 µA C Base-Emitter Saturation Voltage vs Collector Current 0.1 1 10 100 0.2 0.4 0.6 0.8 1 I - COLLECTOR CURRENT (mA) C β = 10 25 °C - 40 °C 125 °C Base-Emitter ON Voltage vs Collector Current 0.1 1 10 40 0.2 0.4 0.6 0.8 1 I - COLLECTOR CURRENT (mA) C V = 5.0 V CE 25 °C - 40 °C 125 °C Collect or-Cutoff Current vs Ambient Temperature 25 50 75 100 125 150 0.1 1 10 T - AMBIE NT TEMP ERATURE ( C) A V = 45V ° CB Normalized Collector-Cutoff Current vs Ambient Temperature 25 50 75 100 125 150 1 10 100 1000 T - AMBIE NT TEMP ERATURE ( C) A ° |
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