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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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BC856A 데이터시트(PDF) 1 Page - Fairchild Semiconductor |
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BC856A 데이터시트(HTML) 1 Page - Fairchild Semiconductor |
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1 / 5 page  ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T a=25°C unless otherwise noted Electrical Characteristics T a=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BC856 : BC857/860 : BC858/859 -80 -50 -30 V V V VCEO Collector-Emitter Voltage : BC856 : BC857/860 : BC858/859 -65 -45 -30 V V V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 310 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB= -30V, IE=0 -15 nA hFE DC Current Gain VCE= -5V, IC= -2mA 110 800 VCE (sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA -90 -250 -300 -650 mV mV VBE (sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA -700 -900 mV mV VBE (on) Base-Emitter On Voltage VCE= -5V, IC= -2mA VCE= -5V, IC= -10mA -600 -660 -750 -800 mV mV fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA f=100MHz 150 MHz Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 6 pF NF Noise Figure : BC856/857/858 : BC859/860 : BC859 : BC860 VCE= -5V, IC= -200µA f=1KHz, RG=2KΩ VCE= -5V, IC= -200µA RG=2KΩ, f=30~15000Hz 2 1 1.2 1.2 10 4 4 2 dB dB dB dB BC856/857/858/859/860 Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC859, BC860 • Complement to BC846 ... BC850 SOT-23 1. Base 2. Emitter 3. Collector 1 2 3 |
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