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AM2320NE 데이터시트(PDF) 1 Page - Analog Power |
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1 / 5 page Analog Power AM2320NE N-Channel 20-V (D-S) MOSFET VDS (V) ID(A) 7.0 6.5 Symbol Limit Units VDS 20 VGS ±8 TA=25°C 7.0 TA=70°C 5.5 IDM 20 IS 1.9 A TA=25°C 1.3 TA=70°C 0.8 TJ, Tstg -55 to 150 °C Symbol Maximum Units 100 166 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Maximum Junction-to-Ambient a Continuous Drain Current a PRODUCT SUMMARY 20 rDS(on) (mΩ) 18 @ VGS = 4.5V 21 @ VGS = 2.5V Gate-Source Voltage Power Dissipation a t <= 10 sec Steady State RθJA ID A PD W Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits SOT-23 © Preliminary 1 Publication Order Number: DS_AM2320NE_1A |
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