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FDC6308P 데이터시트(PDF) 3 Page - Fairchild Semiconductor |
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FDC6308P 데이터시트(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page FDC6308P Rev. C Typical Characteristics Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0.0001 0.001 0.01 0.1 1 10 00.2 0.4 0.6 0.811.2 1.4 1.6 -VSD, BODY DIODE VOLTAGE (V) TJ=125 oC 25 oC -55 oC VGS=0 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0246 8 10 - ID, DRAIN CURRENT (A) VGS = -2.5V -3.5V -4.5V -3.0V -4.0V 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = -1.7A VGS = -4.5V 0 0.1 0.2 0.3 0.4 0.5 12 34 5 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -0.9A T A = 125 oC T A = 25 oC 0 2 4 6 8 10 0.51.5 2.53.5 4.55.5 -VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 25 o C 125 o C VDS = -5V 0 2 4 6 8 10 01234 5 -VDS, DRAIN-SOURCE VOLTAGE (V) V GS = -4.5V -2.5V -3.5V -3.0v -2.0V -4.0V |
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