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FDD2512 데이터시트(PDF) 1 Page - Fairchild Semiconductor |
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FDD2512 데이터시트(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page August 2001 2001 Fairchild Semiconductor Corporation FDD2512 Rev B2(W) FDD2512 150V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 6.7 A, 150 V R DS(ON) = 420 m Ω @ V GS = 10 V RDS(ON) = 470 m Ω @ V GS = 6 V • Low gate charge (8nC typical) • Fast switching • High performance trench technology for extremely low RDS(ON) . G S D TO-252 S G D Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 150 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 3) 6.7 A – Pulsed (Note 1a) 20 Power Dissipation (Note 1) 42 (Note 1a) 3.8 PD (Note 1b) 1.6 W TJ, TSTG Operating and Storage Junction Temperature Range −55 to +175 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 3.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD2512 FDD2512 13’’ 16mm 2500 units |
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