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FDD2512 데이터시트(PDF) 1 Page - Fairchild Semiconductor

부품명 FDD2512
상세설명  150V N-Channel PowerTrench MOSFET
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제조업체  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
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FDD2512 데이터시트(HTML) 1 Page - Fairchild Semiconductor

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August 2001
2001 Fairchild Semiconductor Corporation
FDD2512 Rev B2(W)
FDD2512
150V N-Channel PowerTrench
MOSFET
General Description
This
N-Channel
MOSFET
has
been
designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. These MOSFETs feature
faster switching and lower gate charge than other
MOSFETs with comparable RDS(ON) specifications. The
result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• 6.7 A, 150 V R
DS(ON) = 420 m
Ω @ V
GS = 10 V
RDS(ON) = 470 m
Ω @ V
GS = 6 V
• Low gate charge (8nC typical)
• Fast switching
• High performance trench technology for extremely
low RDS(ON)
.
G
S
D
TO-252
S
G
D
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
150
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
– Continuous
(Note 3)
6.7
A
– Pulsed
(Note 1a)
20
Power Dissipation
(Note 1)
42
(Note 1a)
3.8
PD
(Note 1b)
1.6
W
TJ, TSTG
Operating and Storage Junction Temperature Range
−55 to +175
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
3.5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
40
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
96
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD2512
FDD2512
13’’
16mm
2500 units


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