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FDD2670 데이터시트(PDF) 3 Page - Fairchild Semiconductor

부품명 FDD2670
상세설명  200V N-Channel PowerTrench MOSFET
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제조업체  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD2670 데이터시트(HTML) 3 Page - Fairchild Semiconductor

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FDD2670 Rev C1(W)
Typical Characteristics
0
5
10
15
20
02
468
10
VDS, DRAIN-SOURCE VOLTAGE (V)
6.0V
6.5V
5.5V
VGS = 10V
0.8
1
1.2
1.4
1.6
04
8
12
16
20
ID, DRAIN CURRENT (A)
VGS = 5.5V
6.0V
10.0V
6.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0
0.5
1
1.5
2
2.5
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (
oC)
I
D = 3.6A
V
GS = 10V
0
0.1
0.2
0.3
0.4
456789
10
VGS, GATE TO SOURCE VOLTAGE (V)
I
D = 1.8 A
T
A = 125
oC
TA = 25
oC
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
6
12
18
24
30
345678
VGS, GATE TO SOURCE VOLTAGE (V)
TA = 125
oC
25
oC
-55
oC
VDS = 15V
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
TA = 125
oC
25
oC
-55
oC
VGS = 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.


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