FDG328P Rev C(W)

Electrical Characteristics

T

A

= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

Drain–Source Breakdown Voltage

µA

–20

V

∆T

J

Breakdown Voltage Temperature

Coefficient

µA, Referenced to 25°C

–9

mV/

°C

Zero Gate Voltage Drain Current

–1

µA

Gate–Body Leakage, Forward

100

nA

Gate–Body Leakage, Reverse

–100

nA

On Characteristics

(Note 2)

Gate Threshold Voltage

µA

–0.6

–1.5

V

∆T

J

Gate Threshold Voltage

Temperature Coefficient

µA, Referenced to 25°C

3

mV/

°C

Static Drain–Source

On–Resistance

120

169

156

145

210

203

m

Ω

On–State Drain Current

–3

A

Forward Transconductance

5

S

Dynamic Characteristics

Input Capacitance

337

pF

Output Capacitance

88

pF

Reverse Transfer Capacitance

f = 1.0 MHz

51

pF

Turn–On Delay Time

9

18

ns

Turn–On Rise Time

12

22

ns

Turn–Off Delay Time

10

20

ns

Turn–Off Fall Time

Ω

510

ns

Total Gate Charge

3.7

6

nC

Gate–Source Charge

0.7

nC

Gate–Drain Charge

1.3

nC

Drain–Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain–Source Diode Forward Current

–0.62

A

Drain–Source Diode Forward

Voltage

–0.7

–1.2

V

Notes:

a.)

170°/W when mounted on a 1 in

b.)

260°/W when mounted on a minimum pad.

2. Pulse Test: Pulse Width < 300

µs, Duty Cycle < 2.0%