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SI8406DB 데이터시트(PDF) 2 Page - Vishay Siliconix |
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SI8406DB 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 10 page www.vishay.com 2 Document Number: 62530 S12-0978-Rev. A, 30-Apr-12 Vishay Siliconix Si8406DB This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 85 °C/W. c. Case is defined as top surface of the package. THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, b RthJA 37 45 °C/W Maximum Junction-to-Case (Drain)c Steady State RthJC 79.5 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 µA 20 V VDS Temperature Coefficient V DS/TJ ID = 250 µA 18 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ - 3 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.4 0.85 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µA VDS = 20 V, VGS = 0 V, TJ = 70 °C 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = 4.5 V 5A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 1 A 0.026 0.033 VGS = 2.5 V, ID = 1 A 0.028 0.037 VGS = 1.8 V, ID = 1 A 0.030 0.042 Forward Transconductancea gfs VDS = 10 V, ID = 1 A 20 S Dynamicb Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 830 pF Output Capacitance Coss 146 Reverse Transfer Capacitance Crss 61 Total Gate Charge Qg VDS = 10 V, VGS = 8 V, ID = 1 A 13 20 nC VDS = 10 V, VGS = 4.5 V, ID = 1 A 7.5 12 Gate-Source Charge Qgs 1.1 Gate-Drain Charge Qgd 0.8 Gate Resistance Rg VGS = 0.1 V, f = 1 MHz 3.6 Turn-On Delay Time td(on) VDD = 10 V, RL = 10 ID 1 A, VGEN = 4.5 V, Rg = 1 715 ns Rise Time tr 18 40 Turn-Off Delay Time td(off) 30 60 Fall Time tf 10 20 Turn-On Delay Time td(on) VDD = 10 V, RL = 10 ID 1 A, VGEN = 8 V, Rg = 1 510 ns Rise Time tr 17 35 Turn-Off Delay Time td(off) 25 50 Fall Time tf 10 20 |
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