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FDN5618P 데이터시트(PDF) 4 Page - Fairchild Semiconductor |
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FDN5618P 데이터시트(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDN5618P Rev B(W) Typical Characteristics 0 2 4 6 8 10 02 46 8 10 Qg, GATE CHARGE (nC) ID = -1.25A VDS = -20V -40V -30V 0 100 200 300 400 500 600 700 02468 10 12 -VDS, DRAIN TO SOURCE VOLTAGE (V) CISS CRSS COSS f = 1MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.001 0.01 0.1 1 10 100 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms RDS(ON) LIMIT VGS =-10V SINGLE PULSE RθJA = 270 oC/W TA = 25 oC 10ms 1ms 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE RθJA = 270°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) + RθJA RθJA = 270 °C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. |
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