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FDS3570 데이터시트(PDF) 1 Page - Fairchild Semiconductor |
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FDS3570 데이터시트(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page FDS3570Rev.B FDS3570 80V N-Channel PowerTrenchTM MOSFET May 1999 PRELIMINARY 1999 Fairchild Semiconductor Corporation Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 80 V VGSS Gate-Source Voltage ±20 V ID Drain Current - Continuous (Note 1a) 9A - Pulsed 50 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics R θJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W R θJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS3570 FDS3570 13’’ 12mm 2500 units Features 9 A, 80 V. R DS(ON ) = 0.019 Ω @ VGS = 10 V R DS(ON) = 0.022 Ω @ VGS = 6 V. Fast switching speed. High performance trench technology for extremely low R DS(ON). High power and current handling capability. 6 7 8 5 3 2 1 4 S D S S SO-8 D D D G General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. |
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