FDS3570Rev.B

FDS3570

May 1999

PRELIMINARY

1999 Fairchild Semiconductor Corporation

A

= 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

80

V

Gate-Source Voltage

±20

V

Drain Current

- Continuous

(Note 1a)

9A

- Pulsed

50

Power Dissipation for Single Operation

(Note 1a)

2.5

W

(Note 1b)

1.2

(Note 1c)

1

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R

Thermal Resistance, Junction-to-Ambient

(Note 1a)

50

°C/W

R

Thermal Resistance, Junction-to-Case

(Note 1)

25

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

FDS3570

FDS3570

13’’

12mm

2500 units

Features

DS(ON

R

low R

6

7

8

5

3

2

1

4

S

D

S

S

SO-8

D

D

D

G

General Description

This N-Channel Logic Level MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

These MOSFETs feature faster switching and lower gate

charge than other MOSFETs with comparable R

DS(on)

specifications resulting in DC/DC power supply designs

with higher overall efficiency.