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FDS4770 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
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FDS4770 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page FDS4770 Rev B (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) EAS Drain-Source Avalanche Energy Single Pulse, VDD=20V, ID=13.2A 370 mJ IAS Drain-Source Avalanche Current 13.2 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 40 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 42 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 3.9 5 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –8 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 13.2 A VGS = 10 V,ID = 13.2 A, TJ=115 °C 6 9 7.5 10 m Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 30 A gFS Forward Transconductance VDS = 10 V, ID = 13.2 A 45 S Dynamic Characteristics Ciss Input Capacitance 2819 pF Coss Output Capacitance 600 pF Crss Reverse Transfer Capacitance VDS = 20 V, V GS = 0 V, f = 1.0 MHz 291 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 16 29 ns tr Turn–On Rise Time 12 22 ns td(off) Turn–Off Delay Time 41 66 ns tf Turn–Off Fall Time VDD = 20 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 29 46 ns Qg Total Gate Charge 47 67 nC Qgs Gate–Source Charge 15 nC Qgd Gate–Drain Charge VDS = 20 V, ID = 13.2 A, VGS = 10 V 14 nC |
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